Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

نویسندگان

  • Yan-Feng Lao
  • A. G. Unil Perera
  • Y. H. Zhang
  • T. M. Wang
چکیده

Articles you may be interested in Polarization dependent photocurrent spectroscopy of single wurtzite GaAs/AlGaAs core-shell nanowires Appl. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Appl. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited Hf O 2 on In 0. Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy Appl.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Terahertz absorption in AlGaAs films and detection using heterojunctions

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors using AlGaAs as both the emitter and the barrier material with different Al fractions for the two layers are demonstrated. The extension of the HEIWIP concept to wavelengths longer than 110 lm in the GaAs/AlGaAs system requires the use of AlGaAs as the emitter material to reduce the barrier height. The p-type dopi...

متن کامل

Temperature-dependent internal photoemission probe for band parameters

The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter ...

متن کامل

Band offsets of InGaP/GaAs heterojunctions by scanning tunneling spectroscopy

Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using 3-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP ...

متن کامل

Nonlinear-Optical Studies of Spin-Injection Devices

This thesis presents optical characterizations of interfaces in ferromagnetic heterostructures and thin films used for spin polarized electronic devices. In these experiments, femtosecond laser spectroscopies are exploited to investigate the interface magnetization reversal, spin precession, and band offset, which are crucial in determining the performances of spintronic devices. First, magneti...

متن کامل

Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells

The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spect...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014